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| DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D116 BYV97 series Fast soft-recovery controlled avalanche rectifiers Product specification Supersedes data of February 1994 1996 Jun 07 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers FEATURES * Glass passivated * High maximum operating temperature * Low leakage current * Excellent stability * Guaranteed avalanche energy absorption capability * Available in ammo-pack. DESCRIPTION BYV97 series Rugged glass SOD57 package, using a high temperature alloyed construction. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. 2/3 page k (Datasheet) LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM BYV97F BYV97G VR continuous reverse voltage BYV97F BYV97G IF(AV) average forward current PARAMETER repetitive peak reverse voltage a MAM047 Fig.1 Simplified outline (SOD57) and symbol. CONDITIONS MIN. - - - - MAX. 1200 1400 1200 1400 1.6 V V V V A UNIT Ttp = 60 C; lead length = 10 mm see Fig.2; averaged over any 20 ms period; see also Fig.6 Tamb = 50 C; PCB mounting (see Fig. 12); see Fig.3; averaged over any 20 ms period; see also Fig.6 Ttp = 65 C; see Fig.4 Tamb = 65 C; see Fig.5 t = 10 ms half sine wave; Tj = Tj max prior to surge; VR = VRRMmax L = 120 mH; Tj = Tj max prior to surge; inductive load switched off see Fig.7 - IF(AV) average forward current - 0.9 A IFRM IFSM repetitive peak forward current non-repetitive peak forward current - - - 15 8 20 A A A ERSM Tstg Tj non-repetitive peak reverse avalanche energy storage temperature junction temperature - -65 -65 10 +175 +175 mJ C C 1996 Jun 07 2 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers ELECTRICAL CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL VF V(BR)R PARAMETER forward voltage reverse avalanche breakdown voltage BYV97F BYV97G IR reverse current VR = VRRMmax; see Fig.9 VR = VRRMmax; Tj = 165 C; see Fig.9 trr reverse recovery time when switched from IF = 0.5 A to IR = 1 A; measured at IR = 0.25 A; see Fig.14 f = 1 MHz; VR = 0 V; see Fig.11 when switched from IF = 1 A to VR 30 V and dIF/dt = -1 A/s; see Figs 10 and 13 CONDITIONS IF = 3 A; Tj = Tj max; see Fig.8 IF = 3 A; see Fig.8 IR = 0.1 mA 1300 1500 - - - - - - - - - - MIN. TYP. BYV97 series MAX. 1.35 1.65 V V UNIT - - 1 150 500 V V A A ns Cd dI R -------dt diode capacitance maximum slope of reverse recovery current - - 35 - - 5 pF A/s THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note 1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer 40 m, see Fig. 12. For more information please refer to the "General Part of associated Handbook". PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient CONDITIONS lead length = 10 mm note 1 VALUE 46 100 UNIT K/W K/W 1996 Jun 07 3 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers GRAPHICAL DATA MBD419 BYV97 series handbook, halfpage 2.0 I F(AV) (A) 1.6 handbook, halfpage 1.2 MBD420 I F(AV) (A) lead length 10 mm 0.8 1.2 0.8 0.4 0.4 0 0 100 Ttp ( C) o 0 200 0 100 T amb ( oC) 200 a = 1.57; VR = VRRMmax; = 0.5. a = 1.57; VR = VRRMmax; = 0.5. Device mounted as shown in Fig.12. Fig.2 Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage). Fig.3 Maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage). 16 I FRM (A) 12 = 0.05 MBD448 0.1 8 0.2 4 0.5 1 0 10 2 10 1 1 10 10 2 10 3 t p (ms) 10 4 Ttp = 65C; Rth j-tp = 46 K/W. VRRMmax during 1 - ; curves include derating for Tj max at VRRM = 1400 V. Fig.4 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. 1996 Jun 07 4 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYV97 series 10 I FRM (A) 8 = 0.05 MBD442 6 0.1 4 0.2 2 0.5 1 0 10 2 10 1 1 10 10 2 10 3 t p (ms) 10 4 Tamb = 65 C; Rth j-a = 100 K/W. VRRMmax during 1 - ; curves include derating for Tj max at VRRM = 1400 V. Fig.5 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. handbook, halfpage 3 MBD428 handbook, halfpage 200 MBD433 P (W) 2 a=3 2.5 2 1.57 1.42 Tj ( oC) 100 1 BYV97F BYV97G 0 0 1 I F(AV) (A) 2 0 0 1000 VR (V) 2000 a = IF(RMS)/IF(AV); VR = VRRMmax; = 0.5. Solid line = VR. Dotted line = VRRM; = 0.5. Fig.6 Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current. Fig.7 Maximum permissible junction temperature as a function of reverse voltage. 1996 Jun 07 5 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYV97 series MGD316 MGC574 handbook, halfpage 10 IF (A) 10 3 handbook, halfpage IR (A) 10 2 8 6 10 4 1 2 0 0 1 2 VF (V) 3 10 1 0 100 Tj ( C) o 200 Dotted line: Tj = 175 C. Solid line: Tj = 25 C. VR = VRRMmax. Fig.8 Forward current as a function of forward voltage; maximum values. Fig.9 Reverse current as a function of junction temperature; maximum values. MBD439 handbook, full pagewidth 10 t rr (s) IF = 1 5A 1A 10 1 10 1 1 10 dl F /dt (A/s) 10 2 Tj = 25C. For definitions see Fig. 13. Fig.10 Maximum reverse recovery time as a function of the rate of fall of forward current. 1996 Jun 07 6 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYV97 series 102 handbook, halfpage MGD317 handbook, halfpage 50 25 Cd (pF) 7 50 10 2 3 1 1 10 102 VR (V) 103 MGA200 f = 1 MHz; Tj = 25 C. Dimensions in mm. Fig.11 Diode capacitance as a function of reverse voltage; typical values. Fig.12 Device mounted on a printed-circuit board. IF andbook, halfpage dI F dt t rr 10% t dI R dt 100% IR MGC499 Fig.13 Reverse recovery definitions. 1996 Jun 07 7 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYV97 series handbook, full pagewidth DUT + IF (A) 0.5 1 t rr 10 25 V 50 0 0.25 0.5 IR (A) 1 t MAM057 Input impedance oscilloscope: 1 M, 22 pF; tr < 7 ns. Source impedance: 50 ; tr < 15 ns. Fig.14 Test circuit and reverse recovery time waveform and definition. 1996 Jun 07 8 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers PACKAGE OUTLINE handbook, full pagewidth k 3.81 max 28 min Dimensions in mm. The marking band indicates the cathode. , 4.57 max BYV97 series a 0.81 max 28 min MBC880 Fig.15 SOD57. DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. 1996 Jun 07 9 |
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